savantic semiconductor product specification silicon npn power transistors BU2508DF d escription with to-3pfa package high voltage,high speed built-in damper diode applications for use in horizontal deflection circuits of colour tv pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v i c collector current (dc) 8 a i cm collector current (pulse) 15 a i b base collector current (dc) 4 a i bm base current (pulse) 6 a p tot total power dissipation t c =25 45 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors BU2508DF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 700 v v ebo emitter-base breakdown voltage i e =600ma ;i c =0 7.5 13.5 v v cesat collector-emitter saturation voltage i c =4.5a ;i b =1.12a 1.0 v v besat base-emitter saturation voltage i c =4.5a ;i b =1.7a 1.1 v i ces collector cut-off current v ce =bv ces; v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 227 ma h fe-1 dc current gain i c =1a ; v ce =5v 13 h fe-2 dc current gain i c =4.5a ; v ce =1v 4 5.5 7.0 v f diode forward voltage i f =4.5a 1.6 2.0 v c c collector capacitance i e =0; f=1mhz;v cb =10v 80 pf
savantic semiconductor product specification 3 silicon npn power transistors BU2508DF package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm)
|
